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Thin films of Zn1−xCoxO (x=1–15%) were grown on an Al2O3 (0001) substrate by pulsed laser deposition and characterized by investigating their photoluminescence (PL) and other optical properties. The films were highly (0001) oriented without any impurity phases as observed in x-ray diffraction. The optical transmittance spectra showed that the band edge of Zn1−xCoxO was decreased with increase of Co concentration along with a subbandgap absorption in the range of 1.8to2.2eV. The near band-edge PL spectrum of ZnO thin films at 77K showed a strong peak of donor bound exciton at 3.307eV along with the free excitons. However, the PL spectra for free excitons of the Zn1−xCoxO films at 77K did not show any significant redshift due to Co incorporation.
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Samanta et al. (2005) studied this question.
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