Multiple wavelength Fabry–Pérot lasers fabricated by vacancy-enhanced quantum well disordering

Wavelength-shifted GaAs/AlGaAs Fabry–Pérot ridge waveguide lasers were fabricated by vacancy-enhanced quantum well disordering using dielectric cap annealing. 500 μm long and 4 μm wide Fabry–Pérot lasers with emission wavelengths selectively shifted by 20 nm were integrated with unshifted lasers on the same chip, characterized and further compared with lasers fabricated from as-grown material. These investigations showed that the absorption edge of a single-quantum well double heterostructure can be selectively blueshifted after epitaxial growth without compromising diode laser performance.