A ZnO nanorod antireflective coating has been prepared on Cu(In,Ga)Se2 thin film solar cells. This coating leads to a decrease of the weighted global reflectance of the solar cells from 8.6 to 3.5%. It boosts the solar cells short‐circuit current up to 5.7% without significant effect on their open‐circuit voltage and fill factor (FF), which is comparable to a conventional optimized single layer MgF2 antireflective coating. The ZnO nanorod antireflective coating was electrochemically prepared from an aqueous solution at 80°C. The antireflective capability of ZnO nanorod arrays (ZNAs) may be further improved by optimization of growth conditions and their geometry.
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Aé et al. (2010) studied this question.
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