Photovoltaic p-i-n Structure of Sb[sub 2]S[sub 3] and CuSbS[sub 2] Absorber Films Obtained via Chemical Bath Deposition

Chemically deposited, near-intrinsic Sb 2 S 3 thin films and p - Cu Sb S 2 thin films obtained through heating Sb 2 S 3 - Cu S thin films have been integrated into a p-i-n structure: Sn O 2 : F - ( n ) Cd S : In - ( i ) Sb 2 S 3 - ( p ) Cu Sb S 2 - Ag . An open-circuit voltage of 345 mV has been observed under an intensity of illumination of 1 kW m − 2 using a tungsten-halogen lamp. The short-circuit current was 0.2 mA ∕ cm 2 . Structural, optical, and electrical properties of Sb 2 S 3 and Cu Sb S 2 are presented. X-ray photoelectron spectroscopy depth profile on the Cu Sb S 2 film indicated uniformity in composition with respect to Cu, Sb, and S atoms through the film thickness. X-ray diffraction studies using standard mode and grazing incidence at fixed angles showed the layer structure of the photovoltaic p-i-n device.