An analysis procedure was developed that enables studying diffusion in ultrathin films by utilizing the depth-resolved information that is contained in the background of low energy ion scattering (LEIS) spectra. Using a high-sensitivity analyzer/detector combination allows for such a low ion dose that the ion-induced perturbation caused by this technique is negligible and not measurable with LEIS. The developed analysis procedure provides a unique opportunity to study diffusion processes in nanoscaled systems. It was applied to the Mo/Si system, a system that is relevant for extreme ultraviolet optics.
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Rooij-Lohmann et al. (2009) studied this question.
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