We study the effect of doping on hot-electron fluctuation phenomena in gallium arsenide (GaAs). We obtain the noise characteristics of pure and doped n-type GaAs channels at applied electric fields from Monte Carlo simulations of the kinetic processes in the framework of a realistic model of GaAs. We achieve a fit with the available experimental data, and we reveal the effects of inter-electron collisions and the degree of compensation of donors on microwave fluctuation characteristics at heated electric fields. We confirm the sensitivity of nonequilibrium noise phenomena to the presence of inter-electron collisions, though conserving energy and quasi-momentum in the system of electrons.
No takes yet. Share an insight, caveat, or question.
Zubkute et al. (2001) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: