Effect of uniaxial stress on the electron spin resonance in zinc-blende semiconductors

We present a study of the effect of uniaxial stress on the electric-dipole spin resonance absorption in zinc-blende semiconductors. We show that previous work in this field omits an important contribution to the transition amplitude, leading to an underestimate of the strength C₂ of the stress-induced spin-orbit coupling in InSb. The necessary correction factor is between 3 and 4. We suggest experimental configurations that would permit an accurate measurement of this and other related material parameters. One of these exploits the possibility of an interference between stress-induced and stress-free spin-flip transition amplitudes. In this way, not only the magnitude of C₂, but also its sign, could be determined.