Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 1, 1989Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing

View Full Paper
Ask AI
Bookmark
Share

Authors

JFJ. T. FitchNorth Carolina State UniversityCBC. H. BjörkmanApplied Materials (United States)GLG. LucovskyNorth Carolina State University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Fitch et al. (1989) studied this question.

synapsesocial.com/papers/6a98ee2ebd3522584418ee46https://doi.org/10.1116/1.584599
View Full Paper
Ask AI
Bookmark
Share