Vanadium Dioxide Films Deposited on Amorphous SiO2- and Al2O3-Coated Si Substrates by Reactive RF-Magnetron Sputter Deposition

VO 2 films showing abrupt metal–insulator transition (MIT) were fabricated on amorphous-film-coated Si wafers by reactive RF-magnetron sputter deposition using a V-metal target, and postdeposition annealing. The amorphous films were thermally grown SiO 2 or Al 2 O 3 films deposited by low-temperature plasma-enhanced atomic layer deposition. The effects of the underlayer and chamber pressure governing oxidation ambient on MIT characteristics were investigated. The MIT of VO 2 films deposited at 5 mTorr on SiO 2 and Al 2 O 3 induced resistance changes of 1.3 × 10 4 and 2.3 × 10 3 , respectively. The resistance change due to MIT was larger than 6.3 × 10 3 in an operating pressure range as wide as 5–25 mTorr on SiO 2 .