The measurements of low-frequency dielectric dispersion properties of evaporated silicon oxide films under high DC biasing voltage are reported. The results show that the total conductance consists of frequency-dependent and independent parts. The latter part agrees with the differential conductance derived from the DC I-V characteristics and it increases with increasing DC biasing voltage. The former part, which contributes to the relaxation phenomena, decreases with increasing DC biasing voltage. The results of the DC-bias-dependent relaxation phenomena are interpreted by using the two-site hopping model, which is consistent with the results of an electrically excited thermally stimulated current (ETSC) and an absorption current.
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Adachi et al. (1978) studied this question.
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