Far-infrared s→p ± interexciton transitions in InGaAs/GaAs coupled double quantum wells

We consider s → p ± interexciton far-infrared (FIR) magnetooptical transitions in coupled double quantum wells (DQWs). Spatially direct (intrawell) and indirect (interwell) excitons in strained In x Ga 1− x As/GaAs symmetric DQWs with a simple valence band are considered. The evolution of the transition energies and oscillator strengths as functions of the transverse magnetic field B in different regimes is studied: we consider the direct regime (zero and low transverse electric field ℰ), the indirect regime (high ℰ), and the indirect-direct crossover (induced by increasing B at intermediate ℰ).