Freestanding wires of submicrometer width and with lengths up to 40 μm have been fabricated from single-crystal GaAs and Si for studies of quantum transport. Fabrication techniques are described, and the low-temperature properties for semiconductors and metals such as AuPd are compared. Fabrication of three-terminal freestanding GaAs metal–semiconductor field effect transistor structures is demonstrated.
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Hasko et al. (1988) studied this question.