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We report on subterahertz oscillations of resonant tunneling diode oscillators with an integrated patch antenna. The device consists of an InGaAs/InAlAs triple-barrier resonant tunneling diode and a patch antenna on an InP substrate. Current-voltage characteristics indicate a peak current density of 280 kA/cm2, with a peak-valley ratio of about 3 at room temperature. An oscillation frequency of 517 GHz was observed at room temperature through Fourier transformed infrared spectroscopy. The results agree with electromagnetic analysis.
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Sekiguchi et al. (2010) studied this question.
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