New gate structure and fabrication technique for GaAs MESFET's have been developed. Utilizing the gate structure, sub-half-micron gate length can easily be obtained by conventional projection photolithography without any gate resistance increase and mechanical adhesion strength decrease.
No takes yet. Share an insight, caveat, or question.
Imai et al. (1983) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: