A new bromo-bridged Ni III compound has been synthesized. This compound displayed a strong antiferromagnetic interaction between spins located on Ni III species (J=(2350+/-500) K) that result from the strong covalency of the Ni--Br bond and the spin-Peierls transition below 150 K. This was shown by the results of magnetic susceptibility and 81Br nuclear quadrupole resonance spectroscopy analysis. We succeeded in the electrostatic carrier doping of a single crystalline sample by using a field-effect transistor device. This compound also showed n-type semiconductor behavior, which can be reasonably rationalized by the existence of a small amount of Ni II impurities.
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Takaishi et al. (2007) studied this question.
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