Comprehensive study on electronic and magnetic properties has been performed for doped manganite near the phase boundary of the antiferromagnetic metallic (AFM) state, with changing the nominal hole concentration x and the one-electron bandwidth W. In La_1-xSrₓMnO₃ with maximal $W,$ the ferromagnetic metallic ground state in the low-x region is replaced by the AFM state beyond $x=0.54$. On the other hand, the charge-ordered insulating (COI) state appears at x~0.5 for Nd_1-xSrₓMnOₓ with reduced $W.$ The COI ground state is overwhelmed by the AFM state with further increasing $x(>~0.54)$ or $W.$ These competitions of the AFM state with the alternative ground states suggest that the AFM state is a fundamental ground state for doped manganites.
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Moritomo et al. (1998) studied this question.
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