100 µm stripe, 500 µm long InGaAs/InGaP/GaAs facet-coated diode lasers of low series resistance Rs (0.09 Ω) emit up to 6 W CW output power from their front facets. Comparison with previously published data indicates that for low Rs (≤ 0.10 Ω) devices, the internal power density at catastrophic optical-mirror damage (P̄COMD) is independent of device length, agreeing closely with theory.
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Botez et al. (1997) studied this question.
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