The stacking fault ribbon of dissociated 60° dislocations in silicon is imaged with resolution better than 0.33 nm. The dissociation width of the dislocations had been frozen in under high shear stress. It is relaxed by heating within the electron microscope. The dynamics of kinks on the partial dislocations can be analyzed in this way. We find the migration energy of kinks on 90° partials to be Wm = (1.24 ± 0.07) eV. The formation energy of a single kink is estimated to Fk = (0.73 ± 0.15) eV. Obstacles for kink motion are observed under the beam; they are thermally overcome with activation energy Eu = 2.4 eV.
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Alexander et al. (1999) studied this question.
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