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Technological modes in which high-efficiency GaAs: Si/GaAs: C tunneling structures can be fabricated by MOS-hydride epitaxy have been determined. It was demonstrated that use of C and Si dopants makes it possible to obtain a p-n junction with low diffusion spreading of dopant profiles. It was shown that fabrication of high-efficiency tunnel diodes requires that GaAs layers should be doped with acceptor and donor impurities to a level of ∼9 × 1019 cm−3. Tunnel diodes were fabricated using the tunnel structures and their current-voltage characteristics were studied. Peak current densities J p ≈ 1.53 kA cm−2 and a differential resistance R ≈ 30 mΩ under a reverse bias were obtained in the tunnel diodes.
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Vinokurov et al. (2009) studied this question.
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