A method which combines thermal and plasma dissociation of a methane/hydrogen gas mixture for low-pressure chemical vapor deposition of diamond is described. A hot, thin-walled, refractory metal cathode is used to generate a high-current, low-voltage discharge. The substrates are located on the anode and immersed in the plasma emanating from the cathode tip. No auxiliary substrate heating is employed. Polycrystalline diamond particles and films are obtained on silicon (100) and molybdenum substrates at growth rates of 1–3 μm/h.
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Singh et al. (1988) studied this question.
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