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It is shown that the ionized impurity mobility is reduced by a factor close to [1 +(Δn/n0)]−l when spatial fluctuations of the carrier density are present in the crystal. This result is valid for degenerated and non degenerated semiconductors. It is also shown, that acoustical or optical scattering modes are not affected by these fluctuations.
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Barjon et al. (1976) studied this question.
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