Growth Rate of Diamond on Polycrystalline 〈110〉 Diamond Substrates from Carbon Disulfide in Hydrogen by Hot‐Filament‐Assisted Chemical Vapor Deposition

The growth rates for the deposition of diamond by hot‐filament‐assisted chemical vapor deposition using carbon disulfide (CS 2 ) in hydrogen and methane (CH 4 ) in hydrogen were investigated on polished, 〈110〉 textured, polycrystalline diamond substrates. The carbon concentration in each system was varied from 1% to 2.5%. The deposition rate increased proportionately with carbon concentration for both systems. The CH 4 ‐H 2 system gave higher growth rates with an essentially constant difference in rate between CS 2 and CH 4 . Possible explanations for this are discussed with the most likely either a catalytic effect of sulfur or sulfur‐containing species on gas‐phase homogeneous atomic hydrogen recombination, or the surface chemisorption of relatively less labile sulfur‐containing species at the diamond surface.