Negative differential resistance at Ag∕Si nanowires on silicon carbide: From a passive to an active massively parallel architecture

We study massively parallel Si atomic lines as a template for Ag deposition on silicon carbide surfaces by scanning tunneling microscopy and spectroscopy (electrons/photons). This atomically engineered passive system amazingly turns into an active network with Ag∕Si nanowires exhibiting a negative differential resistance behavior. This results from Ag atoms selectively inducing a surface state at Si nanowires yielding a double tunnel barrier. These findings lead to a massively parallel active architecture in the solid state.