Si CNO – GO composites with the negative temperature coefficient of resistance for high‐temperature sensor applications

We report the synthesis of silicon oxycarbonitride ceramic‐graphene oxide (Si CNO – GO ) composites by using polyvinylsilazne ( PVSZ ) and GO as precursors through cross‐linking processes, in which GO organizes into microspheres in the Si CNO matrix. The formation of GO microspheres significantly enhances the electrical conductivity of Si CNO . The electrical resistivity of Si CNO – GO composites shows a negative temperature coefficient in the range from 25°C to 600°C. We demonstrate the application of Si CNO – GO composites as the functional component of high‐temperature sensors.