Light-induced phenomena in a -Si:H were studied by photoluminescence (PL) and optically detected magnetic resonance (ODMR) measurements. The experimental results on the spectral dependence of PL and ODMR against the excitation intensity measured before and after prolonged illumination provide evidence for creation of both radiative ( E centers) and nonradiative (Si-dangling bonds) defects, whose energy level in the gap and nature are discussed.
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Yamaguchi et al. (1989) studied this question.
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