This communication provides a detailed examination of the morphology of thin films of CuInSe2 prepared by chemical spray pyrolysis on borosilicate glass, molybdenum-coated glass, and CdS substrates. The latter two are used in thin-film heterojunction solar cells of CuInSe2/CdS in the backwall and reverse backwall (RBW) configurations, respectively, and hence are of great technological interest. The pseudoepitaxial growth of CIS on CdS and its low deposition temperature (250 °C) which inhibits interdiffusion suggest that one should prepare CuInSe2/CdS solar cells in the RBW configuration.
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Brown et al. (1990) studied this question.
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