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November 1, 1993Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

New characterization method of ion current-density profile based on damage distribution of Ga+ focused-ion beam implantation in GaAs

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GAGérard AssayagInstitut de Recherche et Coordination Acoustique Musique CVChristophe VieuCentre National de la Recherche Scientifique JGJ. GiérakCentre de Nanosciences et de Nanotechnologies

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Cite This Study

Assayag et al. (1993) studied this question.

synapsesocial.com/papers/6a9928c24dca4b63f8f5abcb https://doi.org/10.1116/1.586998

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