Growth and Characterization of Ferroelectric Pb(Zr, Ti)O3 Films on Interface-Controlled CeO2(111)/Si(111) Structures

Pb(Zr0.52Ti0.48)O3(PZT)/CeO2 films were grown on Si(111) substrates by the pulsed laser deposition method. Room-temperature (20° C) deposition of the CeO2 film on a hydrogen-terminated Si surface resulted in a sharp hetero-interface with no amorphous transition layer. PZT films were grown on the CeO2 layer in {101} orientation with in-plane three directions at substrate temperatures higher than 450° C. An Al/PZT(80 nm)/CeO2(24 nm)/Si structure showed a threshold voltage shift as large as 1.6 V (when bias voltage was 3 V) in a capacitance–voltage ( C–V ) curve due to the surface charges induced by ferroelectric polarization of the PZT film.