Sputtered thin films of perovskite-structured ferroelectric Pb(Sc1/2, Ta11/2)O3, (PST), produced using near stoichiometric ratios of the constituent metals require a post-deposition anneal temperature of 900[ddot]C to promote crystallization of the films in the perovskite phase. In this paper, we report that modification of the metal targets, resulting in the inclusion of a large excess of Pb in the deposited films, forms perovskite structured PST at a much lower substrate temperature of 600[ddot]C. The results of the permittivity and dielectric measurements and transmission electron microscope studies carried out on a PST film deposited on MgO-sapphire substrate are presented in this paper.
No takes yet. Share an insight, caveat, or question.
Pyke et al. (1994) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: