Experimental analysis demonstrates distinct dielectric functions and optical critical points in spray-deposited copper oxide thin films, highlighting parameters for semiconductor device design.
Thin films of copper oxide (Cu 2 O and CuO) were studied by spectroscopic ellipsometry in the 1.5–4.5 eV energy range. The films were deposited on glass substrates by ultrasonic spray pyrolysis at 300 and 550 °C. The Delta and Psi experimental ellipsometric angles of the sample structure were acquired and fitted assuming an optical model which involved a dispersion function consisting of four harmonic oscillators for the bulk layer of copper oxide. The best fitting allowed to compute the real and imaginary dielectric function of the copper oxide layer simulating the dispersion function as a semi‐infinite material. Only three critical points for the film of Cu 2 O at 2.544, 3.486, and 4.367 eV and four critical points for the film of CuO at 1.455, 1.986, 3.523, and 4.422 eV were estimated. Scanning electron microscopy, surface profilometry, X‐ray diffraction, and ultraviolet–visible spectroscopy were carried out as direct characterization techniques.
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Aguilar‐Frutis et al. (2026) studied this question.
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