The authors have investigated tunneling magnetoresistance (TMR) of magnetic tunnel junctions (MTJs) consisting of MnAs thin film (20nm)∕GaAs(1nm)∕AlAs(d=2–5nm)∕GaAs:MnAs nanoclusters (10nm). The GaAs:MnAs material contains ferromagnetic MnAs nanoclusters in a GaAs matrix and acts as a spin injector and a spin detector. They observed an oscillatory behavior of the TMR ratio with the increasing AlAs barrier thickness, which can be explained by the quantum interference of two X-valley related wave functions in the AlAs barrier.
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Hai et al. (2006) studied this question.
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