Room-temperature electroluminescence from H-plasma-implanted silicon

We have investigated the electroluminescence (EL) characteristics of hydrogen-plasma-immersion ion-implanted silicon. For the first time, white light was obtained at room temperature from the samples annealing at a temperature of more than 600 °C. We have investigated the current–voltage curves of the device and the relationship between the EL intensity and current density. We analysed the distribution of hydrogen and the microstructure of samples using secondary ion mass spectrometry and transmission electron microscopy. Experimental results show that hydrogen-related complexes and nanocavities in the amorphous layer are not the causes of the emission. The flat cavities with silicon oxide at the surface may be the key to the EL.