We report on the operation of GaN Schottky diodes and SiC based FETs and capacitors as harsh environment gas sensors at temperatures exceeding 400 °C. GaN Schottky diodes operate at 500 °C to sense NO with oxygen in the background. The voltage response at fixed forward current is square root relationship to oxygen concentration. SiC based capacitors with SiO2/SiN stack show no response to NO with a Pt gate but responds to NO with a Pt/In2O3-SnO2 gate stack. This shows the importance of the separation of the charge after reaction from the metallic catalyst for gas sensing. SiC based MOSFETs are also fabricated and tested for response to NO at 525 °C. The sensor responds to NO and can be used as a predictive sensor with a confidence interval of +/– 15 ppm within +/– 2σ at 200 ppm. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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