Hydrogen precipitation in highly oversaturated single-crystalline silicon

This two part work aims to review the properties of the Si:H system especially at high concentration, and to clarify a few oversaturated Si:H system which have not been covered in the literature, especially in relation to the influence of substrate doping and pre-existing or process-induced defects. The first part reviews the current knowledge of the Si:H system, while the second part describes and comments on new results obtained in an extended characterization of Si:H systems prepared with different procedures.