Local structure of rare‐earth‐doped diluted magnetic semiconductor GaGdN

Local structure around gadolinium atoms in Ga1−xGdxN (x = 0.06) was studied by extended X-ray absorption fine structure measurement using Gd LIII-edge. Majority of Gd atoms are found to be substitutionally incorporated into the Ga sites of wurzite structure of GaN and GaGdN layer is formed. Bond lengths of the 1st nearest-neighbor and the 2nd nearest-neighbor shells of GaGdN layer are largely elongated due to the incorporation of Gd atoms. This indicates that although wurtite structure of GaN is maintained, lattice structure of GaGdN layer is under strong distortion.