The Ti-mask selective-area growth (SAG) of GaN on Ti-nanohole-patterned GaN templates by rf-plasma-assisted molecular-beam epitaxy was employed to demonstrate the fabrication of regularly arranged InGaN/GaN nanocolumns. The SAG of GaN nanocolumns strongly depended on the growth temperature ( T g ); at T g below 900 °C, no SAG occurred, but above 900 °C, SAG occurred. However, an excessive increase in T g to above 900 °C at a nitrogen flow rate ( Q N2 ) of 3.5 sccm brought about increased inhomogeneity in the nanocolumn shape. Upon reducing Q N2 from 3.5 to 1 sccm, uniform nanocolumn arrays were successfully grown around the critical temperature of 900 °C.
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Sekiguchi et al. (2008) studied this question.