Effects of exchange and correlation at finite temperature on subband energies in Si(100) n-channel inversion layers have been studied using a perturbational technique, and quantitative agreement with experiments has been obtained. A parallel calculation employing a local temperature-independent exchange-correlation potential gives similar results for E₁₀, indicating that the change in occupancy of subbands is the major effect of temperature.
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Sarma et al. (1981) studied this question.
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