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Blue laser diodes (LDs) based on m -plane gallium nitride were demonstrated by using m -plane GaN substrates. The lasing wavelength and the threshold current under pulsed operation were 451.8 nm and 134 mA (22.3 kA/cm 2 ), respectively. The device structures consisted of InGaN-based multi-quantum wells, InGaN guiding layers, and Al-containing cladding layers. The InGaN guiding layers play two roles; as appropriate optical waveguides for longer lasing wavelengths and for the prevention of macroscopic cracks parallel to the c -plane. The latter is an indispensable technology in order to fabricate nonpolar LDs for longer wavelengths beyond the blue region.
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Okamoto et al. (2007) studied this question.
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