A picosecond photoconductive detector based on a new photoconductive material, ρ-Ge, is described. Photoconductivity measurements show relaxation times less than 50 ps and sensitivities greater than 0.1 mA/mW with 25-μm electrode spacings. A comparison is made with similar devices through the introduction of a merit-figure Fi, which we propose as being particularly suited to evaluating picosecond photodetectors. The device is capable of operation to wavelengths of 1.7 μm.
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Alfred P. DeFonzo (1981) studied this question.
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