A new attempt for understanding temperature-dependent thresholds in lead salt injection lasers

For calculating the threshold in semiconductor injection lasers with k-conserving interband transitions a model is proposed which is valid both in the T = 0 and the T ≠ 0 case. Assuming a strongly degenerate active medium but non-degenerate minority carriers, analytical expressions are obtained for the threshold in lead chalcogenide lasers both, for the Dimmock and the Kane band model. A quantitative analysis is carried out for Pb0.83Sno.17Te as the active medium and radiative as well as Auger recombination.