UV patterning of vanadium pentoxide films for device applications

In this work we present the results of selective chemical etching of amorphous vanadium pentoxide films after their modification by ultraviolet (UV) radiation. V 2 O 5 resist can be either positive or negative, depending on the developer composition. It was shown that UV-exposed V 2 O 5 films after development and vacuum annealing can be transformed into VO 2 structures which exhibit an electrically induced resistance switching effect. The proposed method demonstrates the feasibility of using V 2 O 5 as an effective inorganic resist material for ambient condition UV photomicrolithography. Also, this material has a great potential for fabrication of vanadium oxide-based devices.