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January 1, 2009Journal of The Electrochemical Society

Enhanced Extraction and Efficiency of Blue Light-Emitting Diodes Prepared Using Two-Step-Etched Patterned Sapphire Substrates

Ray‐Ming Lin Yuan-Chieh Lu Sheng-Fu Yu YewChung Sermon Wu Chung-Hao Chiang Shoou‐Jinn Chang

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Abstract

Enhanced Extraction and Efficiency of Blue Light-Emitting Diodes Prepared Using Two-Step-Etched Patterned Sapphire Substrates, Lin, Ray-Ming, Lu, Yuan-Chieh, Yu, Sheng-Fu, Wu, YewChung Sermon, Chiang, Chung-Hao, Hsu, Wen-Ching, Chang, Shoou-Jinn

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Lin et al. (2009) studied this question.

synapsesocial.com/papers/6a99739dd4ecc439fa157860 https://doi.org/10.1149/1.3231502

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresOriginal Research · 1995 · 1,502 citations
2Dislocation density reduction via lateral epitaxy in selectively grown GaN structuresOriginal Research · 1997 · 495 citations
3Defect structure in selectively grown GaN films with low threading dislocation densityCross-Sectional Study · 1997 · 414 citations
4Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire templateOriginal Research · 2008 · 119 citations
5Study on Sapphire Surface Preparation for III-Nitride Heteroepitaxial Growth by Chemical TreatmentsOriginal Research · 2002 · 70 citations

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