The photoluminescence (PL), piezoelectric photothermal (PPT) and transmittance measurements were carried out at room temperature for ZnTe light emitting diode fabricated by the thermal diffusion of Al on p-type substrates. The same transmittance spectra were observed when the light was illuminated to both the Al-diffused side and the other sides without Al. No signals due to impurities were present in the transmittance spectra. However, a signal due to impurities was clearly observed at 2.15 eV in the PPT spectrum. This signal which had an activation energy of 110 meV was not seen in the PL spectrum. Therefore, it was deduced that the defect acted as a nonraditive recombination center.
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Yoshino et al. (2002) studied this question.
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