In this article, we introduce a new semi-analytical model to calculate the erase (ERS) transients of 3-D gate-all-around (GAA) NAND flash memories. A previously proposed program (PGM) model is revised by adopting the amphoteric trap model (ATM). Injection/escape/back tunneling components are added and the influences of each are investigated. The proposed model makes a better fit with experimental data than the previous model and also successfully implements the back tunneling component.
No takes yet. Share an insight, caveat, or question.
Yoo et al. (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: