The calculation of donor densities fromCU measurements on MIS ZnSe diodes

MIS light-emitting diodes of ZnSe are prepared with interfacial layers of native ZnO and electron-beam deposited films of ZnS. A method of deriving an estimate of the thickness of the layer from capacitance-voltage measurements made at frequencies greater than 100 kHz is discussed, and it is shown that the magnitude of the uncompensated donor density derived from the C−2U plot does not vary, within the limits of experimental accuracy, with interfacial layers up to 1000 Å thick.