⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

July 23, 2015IEEE Electron Device Letters

High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for X -Band Applications

Abdalla Eblabla X. Li Iain Thayne D. J. Wallis Ivor Guiney K. Elgaid

View at Publisher

Ask AI

Bookmark

Share

Abstract

This letter reports the RF performance of a 0.3-μm gate length AlGaN/AlN/GaN HEMT realized on a 150-mm diameter low-resistivity (LR) (σT) and maximum frequency of oscillation (fMAX) of 55 and 121 GHz, respectively, were obtained. To our knowledge, these are the highest fT/fMAXvalues reported to date for GaN HEMTs on LR silicon substrates.

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Eblabla et al. (2015) studied this question.

synapsesocial.com/papers/6a99903d2f2c4aeb9b56cc88 https://doi.org/10.1109/led.2015.2460120

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si 3 N 4Original Research · 2008 · 13 citations
2Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFETOriginal Research · 2010 · 74 citations
3LOW-LOSS GROUNDED ELEVATED COPLANARWAVEGUIDE FOR SUB-MILLIMETERWAVE MMIC APPLICATIONSOriginal Research · 2011 · 3 citations
4Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) SubstrateOriginal Research · 2012 · 41 citations
5High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ PassivationOriginal Research · 2014 · 59 citations

More related papers

Novel Shielded Coplanar Waveguides on GaN-on-Low Resistivity Si Substrates for MMIC Applications2015
Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates2001
High RF performance improvement using surface passivation technique of AlGaN/GaN HEMTs at K‐band application2013

More from IEEE Electron Device Letters

All-ALD Sequential Monolithic Integration of Selector-Free Five-Layer Ferroelectric Diodes for 3-D Cross-Point MemoryThu,
Enhanced Thermal Management in GaN Superlattice Castellated Field Effect TransistorsMon,