Ultrashallow p-type layer formation by rapid vapor-phase doping using a lamp annealing apparatus

Ultrashallow p-type layers below 30 nm were formed by a rapid vapor-phase doping involving a lamp annealing system. A new one-wafer-type apparatus with tungsten lamps has been developed for use in this process. Temperatures at five different points on a 4-in. wafer are in situ monitored by infrared radiative thermometers with optical fibers to maintain a uniform temperature profile across the wafer. By using hydrogen and B2H6 gas, an ultrashallow boron-doped layer of below 30 nm with the surface boron concentration of 5.8×1019 cm−3 was formed after 10 s of 900 °C annealing with a B2H6 flow rate of 100 ml/min.