Growth of GaN and AlGaN on (100) β‐Ga2O3 substrates

The crystalline quality of GaN and Al0.08Ga0.92N epitaxial layers on (100) β‐Ga2O3 substrates was significantly improved by the facet‐controlled growth method. The facets were controlled by changing the nitrogen ambient thermal annealing temperature. We demonstrated the high‐crystalline‐quality GaN and Al0.08Ga0.92N on β‐Ga2O3 substrates, which were comparable to GaN and AlGaN on sapphire substrates using low‐temperature buffer layers. This method is useful for the fabrication of vertical‐type ultraviolet (UV) light‐emitting diodes (LEDs) on β‐Ga2O3 substrates. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)