Electrochemical Fabrication of a Memory Device Based on Conducting Polymer Nanocomposites

Memory devices with sandwiched structures were fabricated by electrochemical deposition of the active layers onto indium tin oxide substrates. The active layers with thicknesses of 240−280 nm were composed of poly(3-hexylthiohene) and gold nanoparticles (GNPs), in which the GNP content was around 9 wt %. The devices exhibited an on/off conductivity ratio of 10 3 and can be read for over 10 4 times without a distinct performance decrease even after being stored in air without packing for over 1 month.