Gold layers have been deposited from methyl(triethylphosphine)gold(I) by metalorganic chemical vapour deposition (MOCVD) and their structure and composition examined. At two deposition temperatures the layers have an underlying structure which is fine‐grained in the case of the 500°C layer and therefore of interest for thin‐layer device structures. Impurity levels are low in this layer.
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Allen et al. (1995) studied this question.
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